FQB8N90CTM

new-10%

Manufacturer part number:FQB8N90CTM

Manufacturer:ON Semiconductor

Description:MOSFET

Case Package:SOT-23

Datasheet:FQB8N90CTM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	171W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.9 Ω @ 3.15A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2080pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6.3A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	110ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	70 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	6.3A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	900V
Pulsed Drain Current-Max (IDM)	25A
Avalanche Energy Rating (Eas)	850 mJ
Height	4.83mm
Length	10.67mm
Width	9.65mm
RoHS Status	ROHS3 Compliant