IRF7324TRPBF

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IRF7324TRPBF

Manufacturer part number:IRF7324TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET 2P-CH 20V 9A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7324TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	18mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Max Power Dissipation	2W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-9A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	IRF7324PBF
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	17 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 9A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2940pF @ 15V
Current - Continuous Drain (Id) @ 25°C	9A
Gate Charge (Qg) (Max) @ Vgs	63nC @ 5V
Rise Time	36ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	190 ns
Turn-Off Delay Time	170 ns
Continuous Drain Current (ID)	-9A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	71A
FET Technology	METAL-OXIDE SEMICONDUCTOR
Recovery Time	270 ns
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.75mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free