IRF7389TRPBF Description

In order to produce extraordinarily low on-resistance per silicon area, International Rectifier's Fifth Generation HEXFETs employ cutting-edge processing processes. With this benefit combined with the high switching speed and ruggedized device architecture that HEXFET Power MOSFETs are renowned for, the designe is given an incredibly efficient and dependable device for usage in a number of applications. Its improved thermal properties and multiple-die capacity make the SO-8 perfect for a variety of power applications. This modification was made possible by a specially designed leadframe. This advancement allows for the usage of many devices while drastically reducing the amount of board space needed. Vapor phase infrared, or wave soldering technology is intended for use with the packaging.

IRF7389TRPBF Features

• Generating Technology V

• Extremely Low On-Resistant

• Offering a Free Half Bridge

• The Surface Mount

• Complete Avalanche Rating

• Lead-Free

IRF7389TRPBF Applications

Switching applications