SIA519EDJ-T1-GE3

new-10%

Manufacturer part number:SIA519EDJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 4.5A/4.5A N&P-CH MOSFET

Case Package:SOT-23

Datasheet:SIA519EDJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	40MOhm
Subcategory	Other Transistors
Max Power Dissipation	7.8W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SIA519
Pin Count	6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
Case Connection	DRAIN
FET Type	N and P-Channel
Rds On (Max) @ Id, Vgs	40m Ω @ 4.2A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Drain to Source Voltage (Vdss)	20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)	4.5A
Threshold Voltage	600mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free