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NVMFD5C672NLT1G

NVMFD5C672NLT1G

NVMFD5C672NLT1G

ON Semiconductor

NVMFD5C672NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NVMFD5C672NLT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 48 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-F6
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 11 ns
Power - Max 3.1W Ta 45W Tc
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 11.9m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 30μA
Input Capacitance (Ciss) (Max) @ Vds 793pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 4.5V
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0168Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 146A
Avalanche Energy Rating (Eas) 66 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 175°C
FET Feature Standard
Height 1.1mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,500 $0.57948 $0.57948
3,000 $0.54085 $1.62255
7,500 $0.51381 $3.59667
10,500 $0.49449 $4.9449
NVMFD5C672NLT1G Product Details

NVMFD5C672NLT1G      Description


  The half-dual N-channel power MOSFET is integrated with Schottky and packaged in DFN8 (SO8FL). These N-channel power MOSFET adopt a power-level solution in a common package to minimize board space, parasitic inductance and power loss. Double N-channel power MOSFET lead-free, halogen-free / BFR-free, in line with RoHS standards. Typical applications include DC-DC converters, system voltage rails and load points.


NVMFD5C672NLT1G                Features


? Small Footprint (5x6 mm) for Compact Design

? Low RDS(on) to Minimize Conduction Losses

? Low QG and Capacitance to Minimize Driver Losses

? NVMFD5C672NLWF ? Wettable Flank Option for Enhanced Optical

Inspection

? AEC?Q101 Qualified and PPAP Capable

? These Devices are Pb?Free and are RoHS Compliant

 

NVMFD5C672NLT1G                     Applications  


DC-DC converters

system voltage rails

load points

 

 





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