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IRF7422D2TRPBF

IRF7422D2TRPBF

IRF7422D2TRPBF

Infineon Technologies

MOSFET P-CH 20V 4.3A 8-SOIC

SOT-23

IRF7422D2TRPBF Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series FETKY™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 90mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Current Rating -4.3A
Number of Elements 1
Power Dissipation-Max 2W Ta
Power Dissipation 2W
Turn On Delay Time 8.1 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 90mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.3A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Rise Time 26ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 4.3A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Input Capacitance 610pF
FET Feature Schottky Diode (Isolated)
Drain to Source Resistance 60mOhm
Rds On Max 90 mΩ
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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