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IRF7453

IRF7453

IRF7453

Infineon Technologies

IRF7453 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7453 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 230mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 930pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status Non-RoHS Compliant
IRF7453 Product Details

IRF7453 Description


IRF7453 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a Drain to Source Voltage (Vdss) of 250V. The operating temperature of the IRF7453 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7453 has 8 pins and it is available in Tube packaging way.



IRF7453 Features


  • Low Gate to Drain Charge to Reduce Switching Losses

  • Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001)

  • Fully Characterized Avalanche Voltage and Current



IRF7453 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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