IRLU8256PBF

new-10%

Manufacturer part number:IRLU8256PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 81A IPAK

Case Package:SOT-23

Datasheet:IRLU8256PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Supplier Device Package	I-PAK
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Through Hole
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	63W Tc
Power Dissipation	63W
Turn On Delay Time	9.7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1470pF @ 13V
Current - Continuous Drain (Id) @ 25°C	81A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Rise Time	46ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8.5 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	81A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
Dual Supply Voltage	25V
Input Capacitance	1.47nF
Recovery Time	29 ns
Drain to Source Resistance	8.5mOhm
Rds On Max	5.7 mΩ
Nominal Vgs	1.8 V
Height	6.22mm
Length	6.7056mm
Width	2.3876mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant