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IRF7459

IRF7459

IRF7459

Infineon Technologies

IRF7459 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7459 Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 12A
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2480pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Rise Time 4.5ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Vgs (Max) ±12V
Continuous Drain Current (ID) 12A
Drain to Source Breakdown Voltage 20V
Input Capacitance 2.48nF
Rds On Max 9 mΩ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
IRF7459 Product Details

IRF7459 Description


IRF7459 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 20V. The operating temperature of the IRF7459 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7459 has 8 pins and it is available in Tube packaging way. The Continuous Drain Current (ID) of IRF7459 is 12A and its Drain to Source Voltage (Vdss) is 20V.



IRF7459 Features


  • Ultra-Low Gate Impedance

  • Very Low RDS(on) at 4.5V VGS

  • Fully Characterized Avalanche Voltage and Current



IRF7459 Applications


  • High-Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use

  • High-Frequency Buck Converters for Computer Processor Power


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