IRF7459 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7459 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Supplier Device Package
8-SO
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2007
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
20V
Technology
MOSFET (Metal Oxide)
Current Rating
12A
Power Dissipation-Max
2.5W Ta
Power Dissipation
2.5W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2480pF @ 10V
Current - Continuous Drain (Id) @ 25°C
12A Ta
Gate Charge (Qg) (Max) @ Vgs
35nC @ 4.5V
Rise Time
4.5ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.8V 10V
Vgs (Max)
±12V
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
20V
Input Capacitance
2.48nF
Rds On Max
9 mΩ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
IRF7459 Product Details
IRF7459 Description
IRF7459 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 20V. The operating temperature of the IRF7459 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7459 has 8 pins and it is available in Tube packaging way. The Continuous Drain Current (ID) of IRF7459 is 12A and its Drain to Source Voltage (Vdss) is 20V.
IRF7459 Features
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
IRF7459 Applications
High-Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use
High-Frequency Buck Converters for Computer Processor Power