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SI4831BDY-T1-E3

SI4831BDY-T1-E3

SI4831BDY-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 6.6A 8-SOIC

SOT-23

SI4831BDY-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 186.993455mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series LITTLE FOOT®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 3.3W Tc
Power Dissipation 2W
Turn On Delay Time 8 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 42mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 625pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.6A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) -6.6A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Input Capacitance 625pF
FET Feature Schottky Diode (Isolated)
Drain to Source Resistance 42mOhm
Rds On Max 42 mΩ
Height 1.5mm
Length 5mm
Width 4mm
RoHS Status ROHS3 Compliant

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