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IRF7464

  • IRF7464
  • IRF7464

IRF7464

IRF7464

Infineon Technologies

IRF7464 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7464 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 730mOhm @ 720mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.2A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.170453 $0.170453
10 $0.160804 $1.60804
100 $0.151703 $15.1703
500 $0.143116 $71.558
1000 $0.135015 $135.015
IRF7464 Product Details

IRF7464 Description


IRF7464 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 200V. The operating temperature of the IRF7464 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7464 has 8 pins and it is available in Tube packaging way.



IRF7464 Features


  • Low Gate to Drain Charge to Reduce Switching Losses

  • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)

  • Fully Characterized Avalanche Voltage and Current



IRF7464 Applications


  • High frequency DC-DC converters

  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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