IRF7464PBF

new-10%

Manufacturer part number:IRF7464PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 1.2A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7464PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	1.2A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Power Dissipation	2.5W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	730mOhm @ 720mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.2A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	9.5ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	1.2A
Threshold Voltage	5.5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	200V
Dual Supply Voltage	200V
Input Capacitance	280pF
Drain to Source Resistance	730mOhm
Rds On Max	730 mΩ
Nominal Vgs	5.5 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free