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IRF6674TR1PBF

IRF6674TR1PBF

IRF6674TR1PBF

Infineon Technologies

MOSFET N-CH 60V 13.4A DIRECTFET

SOT-23

IRF6674TR1PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MZ
Number of Pins 7
Supplier Device Package DIRECTFET™ MZ
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 3.6W Ta 89W Tc
Element Configuration Dual
Power Dissipation 3.6W
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11mOhm @ 13.4A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13.4A Ta 67A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.7 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 13.4A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Input Capacitance 1.35nF
Recovery Time 48 ns
Drain to Source Resistance 9mOhm
Rds On Max 11 mΩ
Nominal Vgs 4 V
Height 533.4μm
Length 6.35mm
Width 5.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant

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