IRF7663 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7663 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins
8
Supplier Device Package
Micro8™
Packaging
Tube
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Resistance
20mOhm
Max Operating Temperature
150°C
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Current Rating
-8.2A
Lead Pitch
650μm
Row Spacing
4.24 mm
Power Dissipation-Max
1.8W Ta
Power Dissipation
1.8W
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
20mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2520pF @ 10V
Current - Continuous Drain (Id) @ 25°C
8.2A Ta
Gate Charge (Qg) (Max) @ Vgs
45nC @ 5V
Rise Time
100ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Reverse Recovery Time
70 ns
Continuous Drain Current (ID)
8.2A
Threshold Voltage
-1.2V
Input Capacitance
2.52nF
Rds On Max
20 mΩ
Width
3.05mm
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
IRF7663 Product Details
IRF7663 Description
IRF7663 is a -20v HEXFET? Power MOSFET. New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.