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IRF7701GTRPBF

IRF7701GTRPBF

IRF7701GTRPBF

Infineon Technologies

MOSFET P-CH 12V 10A 8-TSSOP

SOT-23

IRF7701GTRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-TSSOP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 11mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1.5W Ta
Power Dissipation 1.5W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5050pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 100nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Input Capacitance 5.05nF
Drain to Source Resistance 11mOhm
Rds On Max 11 mΩ
Nominal Vgs -1.2 V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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