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IRF7702TRPBF

IRF7702TRPBF

IRF7702TRPBF

Infineon Technologies

MOSFET P-CH 12V 8A 8-TSSOP

SOT-23

IRF7702TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-TSSOP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 14mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1.5W Tc
Power Dissipation 1.5W
Turn On Delay Time 16 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 14mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3470pF @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 81nC @ 4.5V
Rise Time 21ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 250 ns
Turn-Off Delay Time 320 ns
Continuous Drain Current (ID) -8A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Input Capacitance 3.47nF
Drain to Source Resistance 14mOhm
Rds On Max 14 mΩ
Height 1.0414mm
Length 3.0988mm
Width 4.4958mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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