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IRF7707GTRPBF

IRF7707GTRPBF

IRF7707GTRPBF

Infineon Technologies

MOSFET P-CH 20V 7A 8-TSSOP

SOT-23

IRF7707GTRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-TSSOP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Power Dissipation 1.5W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 22mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2361pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Gate Charge (Qg) (Max) @ Vgs 47nC @ 4.5V
Rise Time 81ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 207 ns
Continuous Drain Current (ID) 7A
Drain to Source Breakdown Voltage -20V
Input Capacitance 2.361nF
Drain to Source Resistance 22mOhm
Rds On Max 22 mΩ
RoHS Status RoHS Compliant

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