IRF7739L2TRPBF

new-10%

Manufacturer part number:IRF7739L2TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V DIRECTFET L8

Case Package:SOT-23

Datasheet:IRF7739L2TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric L8
Number of Pins	11
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	HEXFET®
JESD-609 Code	e1
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	9
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-XBCC-N9
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.8W Ta 125W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.8W
Case Connection	DRAIN
Turn On Delay Time	21 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1m Ω @ 160A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11880pF @ 25V
Current - Continuous Drain (Id) @ 25°C	46A Ta 375A Tc
Gate Charge (Qg) (Max) @ Vgs	330nC @ 10V
Rise Time	71ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	42 ns
Turn-Off Delay Time	56 ns
Continuous Drain Current (ID)	46A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	375A
Drain to Source Breakdown Voltage	40V
Avalanche Energy Rating (Eas)	270 mJ
Height	508μm
Length	9.144mm
Width	7.112mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free