IRF7748L1TRPBF Description

The IRF7748L1TRPbF combines the most recent HEXFET® Power MOSFET Silicon technology with cutting-edge DirectFETTM packaging to provide a package with a footprint smaller than a D2PAK and only a 0.7 mm profile that has the lowest on-state resistance. When application note AN-1035 detailing the manufacturing processes and methods is adhered to, the DirectFET package is compatible with current layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. Dual-sided cooling is possible with the DirectFET package, which maximizes heat transmission in power systems. Applications requiring synchronous rectification and high frequency switching are best served by the IRF7748L1TRPbF. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. 

IRF7748L1TRPBF Features

Rds On (Max) @ Id, Vgs: 2.2m Ω @ 89A, 10V

Input Capacitance (Ciss) (Max) @ Vds: 8075pF @ 50V

Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V

Drain to Source Voltage (Vdss): 60V

Turn-Off Delay Time: 54 ns

IRF7748L1TRPBF Applications

RoHS Compliant, Halogen Free 

Lead-Free (Qualified up to 260°C Reflow) 

Ideal for High Performance Isolated Converter

Primary Switch Socket

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible 

Compatible with existing Surface Mount Techniques