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FDAF69N25

FDAF69N25

FDAF69N25

ON Semiconductor

FAIRCHILD SEMICONDUCTOR FDAF69N25MOSFET Transistor, N Channel, 34 A, 250 V, 41 mohm, 10 V, 5 V

SOT-23

FDAF69N25 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series UniFET™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 115W Tc
Element Configuration Single
Power Dissipation 115W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 41m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4640pF @ 25V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 855ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 220 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 34A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.404812 $3.404812
10 $3.212087 $32.12087
100 $3.030271 $303.0271
500 $2.858746 $1429.373
1000 $2.696930 $2696.93

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