IRF7807D2PBF

new-10%

Manufacturer part number:IRF7807D2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 8.3A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7807D2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	FETKY™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	8.3A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Power Dissipation	2.5W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	25mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Current - Continuous Drain (Id) @ 25°C	8.3A Ta
Gate Charge (Qg) (Max) @ Vgs	17nC @ 5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V
Vgs (Max)	±12V
Continuous Drain Current (ID)	8.3A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
FET Feature	Schottky Diode (Isolated)
Drain to Source Resistance	25mOhm
Rds On Max	25 mΩ
Nominal Vgs	1 V
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free