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IRF7807D2TRPBF

IRF7807D2TRPBF

IRF7807D2TRPBF

Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

SOT-23

IRF7807D2TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series FETKY™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 25MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 8.3A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Power Dissipation 1.6W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) 8.3A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
FET Feature Schottky Diode (Isolated)
Drain to Source Resistance 25mOhm
Rds On Max 25 mΩ
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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