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IRF7807ZTR

IRF7807ZTR

IRF7807ZTR

Infineon Technologies

IRF7807ZTR datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7807ZTR Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.8m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.0138Ohm
DS Breakdown Voltage-Min 30V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.741008 $0.741008
10 $0.699064 $6.99064
100 $0.659494 $65.9494
500 $0.622164 $311.082
1000 $0.586948 $586.948
IRF7807ZTR Product Details

IRF7807ZTR Description


IRF7807ZTR is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7807ZTR is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7807ZTR has 8 pins and it is available in Tape & Reel (TR) packaging way. The Drain to Source Voltage (Vdss) of the IRF7807ZTR is 30V.



IRF7807ZTR Features


  • Very Low RDS(on) at 4.5V VGS

  • Ultra-Low Gate Impedance

  • Fully Characterized Avalanche Voltage and Current

  • 100% Tested for RG



IRF7807ZTR Applications


  • Control FET for Notebook Processor Power

  • Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems


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