IRFR120NTRRPBF

new-10%

Manufacturer part number:IRFR120NTRRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 9.4A DPAK

Case Package:SOT-23

Datasheet:IRFR120NTRRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Operating Temperature (Max)	175°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	48W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	210m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.4A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-252AA
Drain Current-Max (Abs) (ID)	9.4A
Drain-source On Resistance-Max	0.21Ohm
Pulsed Drain Current-Max (IDM)	38A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	91 mJ
RoHS Status	ROHS3 Compliant