IRLR7807ZTRPBF

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IRLR7807ZTRPBF

Manufacturer part number:IRLR7807ZTRPBF

Manufacturer:Infineon Technologies

Description:IRLR7807ZTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLR7807ZTRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	13.8MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	43A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	40W
Case Connection	DRAIN
Turn On Delay Time	7.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	780pF @ 15V
Current - Continuous Drain (Id) @ 25°C	43A Tc
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Rise Time	28ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3.5 ns
Turn-Off Delay Time	9.8 ns
Continuous Drain Current (ID)	43A
Threshold Voltage	1.8V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	28 mJ
Recovery Time	35 ns
Nominal Vgs	1.8 V
Height	2.26mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free