IRF7820PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF7820PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2012
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Power Dissipation
2.5W
Turn On Delay Time
7.1 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
78m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id
5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1750pF @ 100V
Current - Continuous Drain (Id) @ 25°C
3.7A Ta
Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V
Rise Time
3.2ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
14 ns
Continuous Drain Current (ID)
3.7A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Nominal Vgs
4 V
Height
1.5mm
Length
5mm
Width
4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.31000
$1.31
10
$1.16800
$11.68
100
$0.91080
$91.08
500
$0.75240
$376.2
IRF7820PBF Product Details
IRF7820PBF Description
IRF7820PBF is a type of power MOSFET provided by Infineon Technologies which is optimized for fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. It is available in the SO-8 package for use in commercial-industrial applications. It is widely accepted throughout the industry due to its low thermal resistance and low package cost.