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IRF7832Z

  • IRF7832Z
  • IRF7832Z

IRF7832Z

IRF7832Z

Infineon Technologies

IRF7832Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7832Z Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3860pF @ 15V
Current - Continuous Drain (Id) @ 25°C 21A Ta
Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status Non-RoHS Compliant
IRF7832Z Product Details

IRF7832Z Description


IRF7832Z is a type of HEXFET power MOSFET provided by Infineon Technologies. It is characterized by ultra-low gate impedance, fully characterized avalanche voltage and current, and very low RDS(on) at 4.5V VGS. Based on its specific characteristics, it is ideally suitable for synchronous MOSFET for notebook processor power and synchronous rectifier MOSFET for isolated DC-DC converters. 



IRF7832Z Features


Ultra-low gate impedance

Fully characterized avalanche voltage and current

20V VGS Max. gate rating

100% tested for Rg

Very low RDS(on) at 4.5V VGS



IRF7832Z Applications


Synchronous MOSFET for notebook processor power

Synchronous rectifier MOSFET for isolated DC-DC converters


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