IRF7855TRPBF

new-10%

Manufacturer part number:IRF7855TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 9.4m Ω @ 12A, 10V ±20V 1560pF @ 25V 39nC @ 10V 8-SOIC (0.154, 3.90mm Width)

Case Package:SOT-23

Datasheet:IRF7855TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	HEXFET®
Published	2006
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	9.4MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	8.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.4m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1560pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	97A
Avalanche Energy Rating (Eas)	540 mJ
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free