IRF8252PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF8252PBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
5305pF @ 13V
Current - Continuous Drain (Id) @ 25°C
25A Ta
Gate Charge (Qg) (Max) @ Vgs
53nC @ 4.5V
Drain to Source Voltage (Vdss)
25V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
25A
Drain-source On Resistance-Max
0.0027Ohm
Pulsed Drain Current-Max (IDM)
200A
DS Breakdown Voltage-Min
25V
Avalanche Energy Rating (Eas)
231 mJ
RoHS Status
RoHS Compliant
IRF8252PBF Product Details
IRF8252PBF Description
IRF8252PBF is a kind of HEXFET? power MOSFET provided by Infineon Technologies utilizing the latest HEXFET Power MOSFET Silicon Technology. It is optimized for low RDS (on) and low gate charge for low conduction and switching losses in synchronous buck operation. As a result, it is well suited for high-efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.