TSM80N08CZ C0G

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Manufacturer part number:TSM80N08CZ C0G

Manufacturer:Taiwan Semiconductor Corporation

Description:MOSFET (Metal Oxide) N-Channel Tube 8m Ω @ 40A, 10V ±20V 3905pF @ 30V 91.5nC @ 10V 75V TO-220-3

Case Package:SOT-23

Datasheet:TSM80N08CZ C0G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	113.6W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3905pF @ 30V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	91.5nC @ 10V
Drain to Source Voltage (Vdss)	75V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$5.127415	$5.127415
10	$4.837184	$48.37184
100	$4.563381	$456.3381
500	$4.305077	$2152.5385
1000	$4.061392	$4061.392

TSM80N08CZ C0G Overview

An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3905pF @ 30V is its maximum input capacitance.For this transistor to work, a voltage 75V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.