FQD17P06TF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FQD17P06TF Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
D-Pak
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta 44W Tc
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
135mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.895384
$0.895384
10
$0.844702
$8.44702
100
$0.796889
$79.6889
500
$0.751782
$375.891
1000
$0.709228
$709.228
FQD17P06TF Product Details
FQD17P06TF Description
FQD17P06TF is a -60v P-Channel QFET? Power MOSFET. The P-Channel enhancement mode power MOSFET FQD17P06TF is produced using a proprietary planar stripe and DMOS technology. The advanced MOSFET FQD17P06TF has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. The onsemi FQD17P06TF is suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.