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IRF8304MTRPBF

IRF8304MTRPBF

IRF8304MTRPBF

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.2mOhm @ 28A, 10V ±20V 4700pF @ 15V 42nC @ 4.5V 30V DirectFET™ Isometric MX

SOT-23

IRF8304MTRPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 7
Supplier Device Package DIRECTFET™ MX
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.8W Ta 100W Tc
Power Dissipation 100W
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.2mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 15V
Current - Continuous Drain (Id) @ 25°C 28A Ta 170A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Rise Time 22ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 4.7nF
Drain to Source Resistance 3.2mOhm
Rds On Max 2.2 mΩ
Nominal Vgs 1.8 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.07000 $2.07
500 $2.0493 $1024.65
1000 $2.0286 $2028.6
1500 $2.0079 $3011.85
2000 $1.9872 $3974.4
2500 $1.9665 $4916.25
IRF8304MTRPBF Product Details

IRF8304MTRPBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4700pF @ 15V.This device conducts a continuous drain current (ID) of 28A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 19 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 3.2mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

IRF8304MTRPBF Features


a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 3.2mOhm
a 30V drain to source voltage (Vdss)


IRF8304MTRPBF Applications


There are a lot of Infineon Technologies
IRF8304MTRPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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