FDMS86263P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDMS86263P Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
68.1mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.5W Ta 104W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
104W
Case Connection
DRAIN
Turn On Delay Time
17 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
53m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3905pF @ 75V
Current - Continuous Drain (Id) @ 25°C
4.4A Ta 22A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Rise Time
10ns
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±25V
Fall Time (Typ)
14 ns
Turn-Off Delay Time
37 ns
Continuous Drain Current (ID)
-4.4A
Threshold Voltage
-2.9V
JEDEC-95 Code
MO-240AA
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
22A
Drain-source On Resistance-Max
0.053Ohm
Drain to Source Breakdown Voltage
-150V
Pulsed Drain Current-Max (IDM)
70A
Max Junction Temperature (Tj)
150°C
Height
1.1mm
Length
5mm
Width
5.85mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FDMS86263P Product Details
FDMS86263P MOSFET Description
The P-Channel MOSFET FDMS86263P presents the circuit designer with a fresh choice that can streamline the circuitry while enhancing performance and parts usage. This device has very low on-resistance in mid-voltage P-Channel silicon technology and a wide operating temperature of -55 to +150 ℃.
FDMS86263P MOSFET Features
RoHS Compliant
Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A
Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A
Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg
100% UIL tested
This product is optimized for fast switching applications as well as load switch applications