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FDMS86263P

FDMS86263P

FDMS86263P

ON Semiconductor

FDMS86263P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMS86263P Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 104W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 53m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3905pF @ 75V
Current - Continuous Drain (Id) @ 25°C 4.4A Ta 22A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±25V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) -4.4A
Threshold Voltage -2.9V
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.053Ohm
Drain to Source Breakdown Voltage -150V
Pulsed Drain Current-Max (IDM) 70A
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Length 5mm
Width 5.85mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $1.15830 $3.4749
6,000 $1.11540 $6.6924
FDMS86263P Product Details

FDMS86263P MOSFET Description


The P-Channel MOSFET FDMS86263P presents the circuit designer with a fresh choice that can streamline the circuitry while enhancing performance and parts usage. This device has very low on-resistance in mid-voltage P-Channel silicon technology and a wide operating temperature of -55 to +150 ℃. 



FDMS86263P MOSFET Features


RoHS Compliant

Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A

Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A

Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg

100% UIL tested

This product is optimized for fast switching applications as well as load switch applications



FDMS86263P MOSFET Applications


Synchronous Rectification Applications

UIS Rating System

Active Clamp Switch

Linear Switching Applications

Totem Pole Switching Circuits

Ground-Connected Loads


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