SSM3J338R,LF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
SSM3J338R,LF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-3 Flat Leads
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
Series
U-MOSVII
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-F3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
17.6m Ω @ 6A, 8V
Vgs(th) (Max) @ Id
1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
1400pF @ 6V
Current - Continuous Drain (Id) @ 25°C
6A Ta
Gate Charge (Qg) (Max) @ Vgs
19.5nC @ 4.5V
Drain to Source Voltage (Vdss)
12V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 8V
Vgs (Max)
±10V
Continuous Drain Current (ID)
6A
Drain Current-Max (Abs) (ID)
6A
Drain-source On Resistance-Max
0.0279Ohm
DS Breakdown Voltage-Min
12V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
SSM3J338R,LF Product Details
SSM3J338R,LF Description
The SSM3J338R,LF is a MOSFET Silicon P-Channel MOS. One kind of field-effect transistor is the metal-oxide-semiconductor field-effect transistor, which is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity.