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SSM3J338R,LF

SSM3J338R,LF

SSM3J338R,LF

Toshiba Semiconductor and Storage

SSM3J338R,LF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

SSM3J338R,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series U-MOSVII
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.6m Ω @ 6A, 8V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 6V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 19.5nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 8V
Vgs (Max) ±10V
Continuous Drain Current (ID) 6A
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.0279Ohm
DS Breakdown Voltage-Min 12V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.09900 $0.297
6,000 $0.09300 $0.558
15,000 $0.08700 $1.305
30,000 $0.08400 $2.52
SSM3J338R,LF Product Details

SSM3J338R,LF Description


The SSM3J338R,LF is a MOSFET Silicon P-Channel MOS. One kind of field-effect transistor is the metal-oxide-semiconductor field-effect transistor, which is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity.



SSM3J338R,LF Features


  • 1.8 V gate drive voltage.

  • Low drain-source on-resistance

: RDS(ON) = 26.3 mΩ (typ.) (@VGS = -1.8 V)

 RDS(ON) = 20.1 mΩ (typ.) (@VGS = -2.5 V)

 RDS(ON) = 15.9 mΩ (typ.) (@VGS = -4.5 V)



SSM3J338R,LF Applications


  • Power Management Switches

  • Automotive

  • Industrial

  • Communications systems

  • As power converters in modern electric vehicles


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