IRF840PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF840PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Series
HEXFET®
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Current Rating
8A
Power Dissipation-Max
125W Tc
Power Dissipation
125W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
8A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
850mOhm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.94000
$1.94
50
$1.56520
$78.26
100
$1.37570
$137.57
500
$1.07792
$538.96
IRF840PBF Product Details
IRF840PBF Description
The IRF840PBF is a 500V N-channel Power MOSFET, third generation HEXFET? power MOSFET that offers the best combination of fast switching, rugged device design, and low on-resistance to the designer. At power dissipation levels of up to 50W, the package is universally preferred for all commercial-industrial applications.