STD2N95K5

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Manufacturer part number:STD2N95K5

Manufacturer:STMicroelectronics

Description:STD2N95K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STD2N95K5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	SuperMESH5™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Base Part Number	STD2N95
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	45W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	8.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	105pF @ 100V
Current - Continuous Drain (Id) @ 25°C	2A Tc
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Rise Time	13.5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Fall Time (Typ)	32.5 ns
Turn-Off Delay Time	20.5 ns
Continuous Drain Current (ID)	2A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	2A
Drain-source On Resistance-Max	5Ohm
Drain to Source Breakdown Voltage	950V
Pulsed Drain Current-Max (IDM)	8A
Avalanche Energy Rating (Eas)	50 mJ
Height	2.4mm
Length	6.6mm
Width	6.2mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free