IRF8736PBF

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IRF8736PBF

Manufacturer part number:IRF8736PBF

Manufacturer:Infineon Technologies

Description:IRF8736PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF8736PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	4.8MOhm
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.8m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	2315pF @ 15V
Current - Continuous Drain (Id) @ 25°C	18A Ta
Gate Charge (Qg) (Max) @ Vgs	26nC @ 4.5V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7.5 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	18A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Recovery Time	24 ns
Nominal Vgs	1.8 V
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free