IRF8736PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF8736PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2007
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
4.8MOhm
Terminal Finish
Matte Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.8m Ω @ 18A, 10V
Vgs(th) (Max) @ Id
2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
2315pF @ 15V
Current - Continuous Drain (Id) @ 25°C
18A Ta
Gate Charge (Qg) (Max) @ Vgs
26nC @ 4.5V
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
7.5 ns
Turn-Off Delay Time
13 ns
Continuous Drain Current (ID)
18A
Threshold Voltage
1.8V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Recovery Time
24 ns
Nominal Vgs
1.8 V
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
IRF8736PBF Product Details
IRF8736PBF Description
The IRF8736PBF is a 30V single N-channel HEXFET? Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET IRF8736PBF is in the SOIC-8 package with 2.5W power dissipation.