SIA444DJT-T1-GE3

new-10%

Manufacturer part number:SIA444DJT-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-Channel 30 V (D-S)

Case Package:SOT-23

Datasheet:SIA444DJT-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
JESD-30 Code	S-PDSO-N3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.5W Ta 19W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.5W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	17m Ω @ 7.4A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	560pF @ 15V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	40A
DS Breakdown Voltage-Min	30V
Height	750μm
Length	2.05mm
Width	2.05mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant