IRF9204PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF9204PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2011
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
143W Tc
Power Dissipation
143W
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
16mOhm @ 37A, 10V
Vgs(th) (Max) @ Id
3V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
7676pF @ 25V
Current - Continuous Drain (Id) @ 25°C
56A Ta
Gate Charge (Qg) (Max) @ Vgs
224nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
56A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-40V
Input Capacitance
7.676nF
Drain to Source Resistance
23mOhm
Rds On Max
16 mΩ
Radiation Hardening
No
RoHS Status
RoHS Compliant
IRF9204PBF Product Details
IRF9204PBF Description
IRF9204PBF is a -40v HEXFET? Power MOSFET. This HEXFET? Power MOSFET IRF9204PBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.