Name: IRF9204PBF
Brand: Infineon Technologies
SKU: IRF9204PBF
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	143W Tc
Power Dissipation	143W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	16mOhm @ 37A, 10V
Vgs(th) (Max) @ Id	3V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	7676pF @ 25V
Current - Continuous Drain (Id) @ 25°C	56A Ta
Gate Charge (Qg) (Max) @ Vgs	224nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	56A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-40V
Input Capacitance	7.676nF
Drain to Source Resistance	23mOhm
Rds On Max	16 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant

IRF9204PBF Product Details

IRF9204PBF Description

IRF9204PBF is a -40v HEXFET? Power MOSFET. This HEXFET? Power MOSFET IRF9204PBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.