IRF9317PBF

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IRF9317PBF

Manufacturer part number:IRF9317PBF

Manufacturer:Infineon Technologies

Description:IRF9317PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF9317PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	19 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.6m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	2.4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	2820pF @ 15V
Current - Continuous Drain (Id) @ 25°C	16A Ta
Gate Charge (Qg) (Max) @ Vgs	92nC @ 10V
Rise Time	64ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	120 ns
Turn-Off Delay Time	160 ns
Continuous Drain Current (ID)	-16A
Threshold Voltage	-1.8V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0066Ohm
Drain to Source Breakdown Voltage	-30V
Avalanche Energy Rating (Eas)	330 mJ
Recovery Time	50 ns
Nominal Vgs	-1.8 V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant