TK4P60DB(T6RSS-Q)

new-10%

Manufacturer part number:TK4P60DB(T6RSS-Q)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 600V 3.7A DPAK-3

Case Package:SOT-23

Datasheet:TK4P60DB(T6RSS-Q) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	π-MOSVII
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	80W Tc
Power Dissipation	80W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2 Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id	4.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.7A Ta
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Rise Time	18ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	8 ns
Continuous Drain Current (ID)	3.7A
Gate to Source Voltage (Vgs)	30V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free