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IRF9530NSTRLPBF

IRF9530NSTRLPBF

IRF9530NSTRLPBF

Infineon Technologies

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 200m Ω @ 8.4A, 10V ±20V 760pF @ 25V 58nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

IRF9530NSTRLPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 1998
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 200mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -14A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.8W Ta 79W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 8.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Rise Time 58ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) -14A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 56A
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 250 mJ
Recovery Time 190 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs -4 V
Height 5.084mm
Length 10.668mm
Width 9.65mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.53000 $1.53
500 $1.5147 $757.35
1000 $1.4994 $1499.4
1500 $1.4841 $2226.15
2000 $1.4688 $2937.6
2500 $1.4535 $3633.75
IRF9530NSTRLPBF Product Details

IRF9530NSTRLPBF Description


IRF9530NSTRLPBF belongs to the family of HEXFET? power MOSFET provided by Infineon Technologies based on advanced processing techniques. It is able to provide low on-state resistance per silicon area, advanced switching performance, and ruggedized device design. Therefore, it is well suited for high-frequency synchronous buck converters for computer processor power and high-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.



IRF9530NSTRLPBF Features


  • Low RDS (on)

  • Low on-state resistance per silicon area

  • Advanced switching performance

  • Ruggedized device design

  • Available in the D2Pak package



IRF9530NSTRLPBF Applications


  • High-frequency synchronous buck converters for computer processor power

  • High-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use


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