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RTQ020N03TR

RTQ020N03TR

RTQ020N03TR

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 125m Ω @ 2A, 4.5V 135pF @ 10V 3.3nC @ 4.5V SOT-23-6 Thin, TSOT-23-6

SOT-23

RTQ020N03TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.25W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 135pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 3.3nC @ 4.5V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 2A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 0.194Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 8A
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.112398 $0.112398
10 $0.106035 $1.06035
100 $0.100034 $10.0034
500 $0.094371 $47.1855
1000 $0.089029 $89.029
RTQ020N03TR Product Details

RTQ020N03TR Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 135pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 2A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 17 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 8A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1.5V threshold voltage. By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.

RTQ020N03TR Features


a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17 ns
based on its rated peak drain current 8A.
a threshold voltage of 1.5V


RTQ020N03TR Applications


There are a lot of ROHM Semiconductor
RTQ020N03TR applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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