IRFH5250TRPBF

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IRFH5250TRPBF

Manufacturer part number:IRFH5250TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.15m Ω @ 50A, 10V ±20V 7174pF @ 13V 110nC @ 10V 8-PowerVDFN

Case Package:SOT-23

Datasheet:IRFH5250TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	HEXFET®
Published	2005
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	1.75MOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-N5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.6W Ta 160W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.6W
Case Connection	DRAIN
Turn On Delay Time	28 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.15m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	7174pF @ 13V
Current - Continuous Drain (Id) @ 25°C	45A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	46ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	45A
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	400A
Nominal Vgs	1.8 V
Height	838.2μm
Length	5.9944mm
Width	5mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free