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IRF9Z34NSTRLPBF

IRF9Z34NSTRLPBF

IRF9Z34NSTRLPBF

Infineon Technologies

IRF9Z34NSTRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF9Z34NSTRLPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 100mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC -55V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -19A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.8W Ta 68W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 68W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 55ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) -19A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -55V
Pulsed Drain Current-Max (IDM) 68A
Dual Supply Voltage 55V
Recovery Time 82 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs -4 V
Height 4.83mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.107658 $1.107658
10 $1.044960 $10.4496
100 $0.985811 $98.5811
500 $0.930011 $465.0055
1000 $0.877369 $877.369
IRF9Z34NSTRLPBF Product Details

IRF9Z34NSTRLPBF Description


IRF9Z34NSTRLPBF is a P-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 55V. The operating temperature of the IRF9Z34NSTRLPBF is -55°C~175°C TJ and its maximum power dissipation is 68W Tc. IRF9Z34NSTRLPBF has 3 pins and it is available in Tape & Reel (TR) packaging way.



IRF9Z34NSTRLPBF Features


  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V

  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V

  • Drive Voltage (Max Rds On,Min Rds On): 10V

  • Vgs(th) (Max) @ Id: 4V @ 250μA



IRF9Z34NSTRLPBF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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