TPH4R10ANL,L1Q

new-10%

Manufacturer part number:TPH4R10ANL,L1Q

Manufacturer:Toshiba Semiconductor and Storage

Description:X35 PB-F POWER MOSFET TRANSISTOR

Case Package:SOT-23

Datasheet:TPH4R10ANL,L1Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Operating Temperature	150°C
Packaging	Tape & Reel (TR)
Series	U-MOSVIII-H
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	2.5W Ta 67W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.1m Ω @ 35A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	6.3nF @ 50V
Current - Continuous Drain (Id) @ 25°C	92A Ta 70A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
RoHS Status	RoHS Compliant