IRFB11N50APBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRFB11N50APBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Series
HEXFET®
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Current Rating
11A
Power Dissipation-Max
170W Tc
Power Dissipation
170W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
520mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1423pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
52nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
500V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.24000
$2.24
50
$1.82080
$91.04
100
$1.64520
$164.52
500
$1.29378
$646.89
1,000
$1.08294
$1.08294
2,500
$1.01266
$2.02532
5,000
$0.97752
$4.8876
IRFB11N50APBF Product Details
IRFB11N50APBF Description
IRFB11N50APBF is a type of HEXFET? power MOSFET provided by Infineon Technologies. It is able to provide improved gate, avalanche and dynamic dV/dt ruggedness, and fully characterized capacitance and avalanche voltage and current. Based on these characteristics, it is well suited for high-speed switching applications, synchronous rectification in SMPS, and uninterruptible power supplies.
IRFB11N50APBF Features
Improved gate, Avalanche
Dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current