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IRFB11N50APBF

IRFB11N50APBF

IRFB11N50APBF

Infineon Technologies

IRFB11N50APBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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IRFB11N50APBF Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Series HEXFET®
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 11A
Power Dissipation-Max 170W Tc
Power Dissipation 170W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 520mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1423pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 11A
Drain to Source Breakdown Voltage 500V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.24000 $2.24
50 $1.82080 $91.04
100 $1.64520 $164.52
500 $1.29378 $646.89
1,000 $1.08294 $1.08294
2,500 $1.01266 $2.02532
5,000 $0.97752 $4.8876
IRFB11N50APBF Product Details

IRFB11N50APBF Description


IRFB11N50APBF is a type of HEXFET? power MOSFET provided by Infineon Technologies. It is able to provide improved gate, avalanche and dynamic dV/dt ruggedness, and fully characterized capacitance and avalanche voltage and current. Based on these characteristics, it is well suited for high-speed switching applications, synchronous rectification in SMPS, and uninterruptible power supplies.



IRFB11N50APBF Features


  • Improved gate, Avalanche

  • Dynamic dV/dt ruggedness

  • Fully characterized capacitance and avalanche voltage and current

  • Available in the TO-220 package



IRFB11N50APBF Applications


  • High-speed power switching

  • Uninterruptible power supply

  • High-efficiency synchronous rectification in SMPS


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