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TK8A50DA(STA4,Q,M)

TK8A50DA(STA4,Q,M)

TK8A50DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 7.5A TO-220SIS

SOT-23

TK8A50DA(STA4,Q,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature 150°C TJ
Packaging Tube
Published 2010
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 35W Tc
Power Dissipation 35W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.04 Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.5A Ta
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 7.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.033904 $5.033904
10 $4.748966 $47.48966
100 $4.480157 $448.0157
500 $4.226563 $2113.2815
1000 $3.987324 $3987.324

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