IRFB3306PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRFB3306PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2011
Series
HEXFET®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
4.2MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
160A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
230W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
230W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.2m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
4520pF @ 50V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Rise Time
76ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
77 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
160A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
620A
Recovery Time
31 ns
Max Junction Temperature (Tj)
175°C
Height
19.8mm
Length
10.668mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.09000
$2.09
50
$1.70820
$85.41
100
$1.54840
$154.84
500
$1.22882
$614.41
1,000
$1.03709
$1.03709
IRFB3306PBF Product Details
IRFB3306PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4520pF @ 50V is its maximum input capacitance.This device's continuous drain current (ID) is 160A, which represents the maximum continuous current it can conduct.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.A maximum pulsed drain current of 620A is the maximum peak drain current rated for this device.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Its overall power consumption can be reduced by using drive voltage (10V).
IRFB3306PBF Features
a continuous drain current (ID) of 160A a drain-to-source breakdown voltage of 60V voltage the turn-off delay time is 40 ns based on its rated peak drain current 620A. a threshold voltage of 4V
IRFB3306PBF Applications
There are a lot of Infineon Technologies IRFB3306PBF applications of single MOSFETs transistors.
PFC stages, hard switching PWM stages and resonant switching