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IRFB3306PBF

IRFB3306PBF

IRFB3306PBF

Infineon Technologies

IRFB3306PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFB3306PBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 4.2MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 160A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4520pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 76ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 77 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 160A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 620A
Recovery Time 31 ns
Max Junction Temperature (Tj) 175°C
Height 19.8mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.09000 $2.09
50 $1.70820 $85.41
100 $1.54840 $154.84
500 $1.22882 $614.41
1,000 $1.03709 $1.03709
IRFB3306PBF Product Details

IRFB3306PBF Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4520pF @ 50V is its maximum input capacitance.This device's continuous drain current (ID) is 160A, which represents the maximum continuous current it can conduct.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.A maximum pulsed drain current of 620A is the maximum peak drain current rated for this device.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Its overall power consumption can be reduced by using drive voltage (10V).

IRFB3306PBF Features


a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 620A.
a threshold voltage of 4V

IRFB3306PBF Applications


There are a lot of Infineon Technologies IRFB3306PBF applications of single MOSFETs transistors.

  • PFC stages, hard switching PWM stages and resonant switching
  • Industrial Power Supplies
  • Uninterruptible Power Supply
  • Solar Inverter
  • Battery Protection Circuit
  • LCD/LED TV
  • Synchronous Rectification
  • DC/DC converters
  • AC-DC Power Supply
  • DC-to-DC converters

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