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FDS4465

FDS4465

FDS4465

ON Semiconductor

FDS4465 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDS4465 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 130mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 8.5MOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -13.5A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 13.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8237pF @ 10V
Current - Continuous Drain (Id) @ 25°C 13.5A Ta
Gate Charge (Qg) (Max) @ Vgs 120nC @ 4.5V
Rise Time 24ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 140 ns
Turn-Off Delay Time 300 ns
Continuous Drain Current (ID) 13.5A
Threshold Voltage -600mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 50A
Dual Supply Voltage -20V
Max Junction Temperature (Tj) 175°C
Nominal Vgs -600 mV
Height 1.75mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.53986 $1.07972
5,000 $0.51435 $2.57175
12,500 $0.49614 $5.95368
FDS4465 Product Details

FDS4465 Description


FDS4465 is a type of P-channel PowerTrench? MOSFET that is manufactured by ON Semiconductor based on the high-performance trench technology for extremely low RDS (on). It features a low gate charge, fast switching speed, as well as high current and power handling capability. Power MOSFET FDS4465 is primarily designed for power management applications with a wide range of gate drive voltage (1.8 V – 8 V).



FDS4465 Features


  • Low RDS (on)

  • Low gate charge

  • Fast switching speed

  • Available in the SOIC8 package

  • High power and current handling capability



FDS4465 Applications


  • Power management applications

  • NVTFS4823NTAG Description


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